IR-Si311 High Power 70 Watts Steady State 1025C Emitters (-P-2 and -E-2) with Parabolic or Elliptical Reflectors Optics:IR-Si311 emitter only, no optics They are offered either as

They are offered either as chip-on-carrier or encapsulated in a low power TO-66 package with collimated or divergent free-space beam output

0 V Peak wavelength 308 +/- 5 nm 308 +/- 5 nm Spectrum FWHM 15 nm 15 nm Viewing angle (half power) 60 deg

Short Wave Infrared Diode Lasers are continuous wave

utilizing a thin film resistor of diamond-like nanostructured amorphous carbon

The TOCON ABC1 is ideal for low UV signals from the picowatt to nanowatts/cm2 range

IR-Si311 High Power 70 Watts Steady State 1025C Emitters (-P-2 and -E-2) with Parabolic or Elliptical Reflectors Optics:IR-Si311 emitter only, no optics They are offered either asDescription Tech Specs Download PDF Item Description The IR Si311 is designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a silicon nitride material. The advanced technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength. When operated at 12 volts 70 watts the IR Si311 reaches 1025C. The IR Si311 P 2 emitters